diff options
author | Baolin Wang | 2019-12-09 11:56:24 +0800 |
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committer | Sebastian Reichel | 2019-12-19 01:36:33 +0100 |
commit | 7772d22e4b0681b5d0ff1bf4127c1b35e7641d07 (patch) | |
tree | adc781d30e9f1103359c6945ae25b88743f57c3c /Documentation | |
parent | 6af8288834b6a9dfcbe9847b675ff24d39d30679 (diff) |
dt-bindings: power: sc27xx: Add a new property to describe the real resistance of coulomb counter chip
Add a new property to describe the real resistance of coulomb counter chip,
which is used to calibrate the accuracy of the coulomb counter chip.
Acked-by: Rob Herring <robh@kernel.org>
Signed-off-by: Baolin Wang <baolin.wang@linaro.org>
Signed-off-by: Baolin Wang <baolin.wang7@gmail.com>
Signed-off-by: Sebastian Reichel <sebastian.reichel@collabora.com>
Diffstat (limited to 'Documentation')
-rw-r--r-- | Documentation/devicetree/bindings/power/supply/sc27xx-fg.txt | 3 |
1 files changed, 3 insertions, 0 deletions
diff --git a/Documentation/devicetree/bindings/power/supply/sc27xx-fg.txt b/Documentation/devicetree/bindings/power/supply/sc27xx-fg.txt index 0a5705b8b592..b6359b590383 100644 --- a/Documentation/devicetree/bindings/power/supply/sc27xx-fg.txt +++ b/Documentation/devicetree/bindings/power/supply/sc27xx-fg.txt @@ -13,6 +13,8 @@ Required properties: - io-channel-names: Should be "bat-temp" or "charge-vol". - nvmem-cells: A phandle to the calibration cells provided by eFuse device. - nvmem-cell-names: Should be "fgu_calib". +- sprd,calib-resistance-micro-ohms: Specify the real resistance of coulomb counter + chip in micro Ohms. - monitored-battery: Phandle of battery characteristics devicetree node. See Documentation/devicetree/bindings/power/supply/battery.txt @@ -52,5 +54,6 @@ Example: nvmem-cells = <&fgu_calib>; nvmem-cell-names = "fgu_calib"; monitored-battery = <&bat>; + sprd,calib-resistance-micro-ohms = <21500>; }; }; |